Reactive Ion Etching System
| Make: | Hind High Vacuum |
| Model: | RIE |
| Year of purchase: | 2016 |
| Funded by: | |
| Location: | Arkavathi |
| Contact email: | fablab@cens.res.in |
| Book New Request | |
- RIE is a directional and selective dry etching technique. It utilizes chemically reactive species (plasma), which are accelerated towards the substrate to remove deposited films or the substrate. Reactive plasma is produced by applying a strong radio frequency (RF) to the electrode (substrate holder).
- RF:13.56 MHz
- Pressure: 1 × 10 -3mbar
- Etching gases used: Argon, Oxygen, Tetrafluoromethane(CF4) and Sulfur hexafluoride(SF6)
- RIE technology can etch various materials such as organic materials, dielectric materials, semiconductors and metals. For etching these materials, different types of gases are used based on their process chemistry. For example, organic materials can be etched using argon and oxygen gases, dielectric materials are typically etched by using SF6 and CF4 gases etc. The etching process can be tuned and optimized by varying RIE parameters such as RF power, gas flow, pressure and time.
| Modes | Duration (hrs) |
|---|---|
| Manual | Depend on the requirements |
| Sl. No. - Category | Fees ( in Rs/- ) + additional 18% GST |
|---|---|
| 01 - Academic Institutes | 500 per slot / 1.5 hrs |
| 03 - External Industry Users | 1,000 / 1.5 hrs |
| 02 - External Industry Partner | 750 / 1.5 hrs |